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1200V/100A Trench-FS Gen1 IGBT, C1, GD100HFQ120C1SD
[Jul 04, 2025]
1200V/100A Trench-FS Gen1 IGBT, C1, GD100HFQ120C1SD Package:C1 Rated Current:100A Chip Type:Trench-FS Gen1 Rated Voltage:1200V Circuit Structure:Half Bridge Hallmark:Flat ...
Company: Dongguan Merry Electronic Co., Ltd.
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 40V, ID: 80A, PD: 100W, fetures, ...
[Jul 04, 2025]
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 40V, ID: 80A, PD: 100W, fetures, applications, PDFN5060-8L, YJG80G04B Features : - VDS : 40V - ID : 80A - RDS(ON)( at ...
Company: Dongguan Merry Electronic Co., Ltd.
Three Phase Bridge Rectifiers, VRM: 600V, Io: 50A, IFSM: 500A, fetures, applications, MT-M, MT5006M ...
[Jul 04, 2025]
Three Phase Bridge Rectifiers, VRM: 600V, Io: 50A, IFSM: 500A, fetures, applications, MT-M, MT5006M THRU MT5016M Features : - UL recognition, file #E230084 - Low thermal ...
Company: Dongguan Merry Electronic Co., Ltd.
N-Channel and P-Channel Complementary MOSFET, VDSS: 30/-30V, ID: 40/-40A, PD: 50/54W, fetures, ...
[Jul 04, 2025]
N-Channel and P-Channel Complementary MOSFET, VDSS: 30/-30V, ID: 40/-40A, PD: 50/54W, fetures, applications, PDFN5060-8L, YJG40NP03B Features : NMOS : - VDS : 30V - ID : 40A - ...
Company: Dongguan Merry Electronic Co., Ltd.
N-Channel and P-Channel ComplementaryMOSFET, VDSS: 40/-40V, ID: 24/-18A, PD: 18.9/19.5W, fetures, ...
[Jul 04, 2025]
N-Channel and P-Channel ComplementaryMOSFET, VDSS: 40/-40V, ID: 24/-18A, PD: 18.9/19.5W, fetures, applications, DFN3333-8L, YJQ016NP04A Features : NMOS : - VDS :40V - ID : 24A - ...
Company: Dongguan Merry Electronic Co., Ltd.
Bridge Rectifiers, VRM: 1000V, Io: 2A, IFSM: 75A, fetures, applications, DBLS, DBL201SA THRU ...
[Jul 04, 2025]
Bridge Rectifiers, VRM: 1000V, Io: 2A, IFSM: 75A, fetures, applications, DBLS, DBL201SA THRU DBL207SA Features : - UL recognition, file #E313149 - Glass passivated chip ...
Company: Dongguan Merry Electronic Co., Ltd.
Bridge Rectifiers, VRM: 1000V, Io: 1.5A, IFSM: 60A, fetures, applications, DB, DB151 THRU DB157
[Jul 04, 2025]
Bridge Rectifiers, VRM: 1000V, Io: 1.5A, IFSM: 60A, fetures, applications, DB, DB151 THRU DB157 Features : - UL recognition, file #E313149 - Glass passivated chip junction - High ...
Company: Dongguan Merry Electronic Co., Ltd.
Three Phase Bridge Rectifiers, VRM: 800V, Io: 25A, IFSM: 400A, fetures, applications, TSB-5, ...
[Jul 04, 2025]
Three Phase Bridge Rectifiers, VRM: 800V, Io: 25A, IFSM: 400A, fetures, applications, TSB-5, DF25NA80 THRU DF25NA160 Features : - UL recognition, file #E230084 - Thin single ...
Company: Dongguan Merry Electronic Co., Ltd.
UL recognition Bridge Rectifiers, VRM: 800V, Io: 8A, IFSM: 200A, fetures, applications, GBU, GBU8AA ...
[Jul 04, 2025]
UL recognition Bridge Rectifiers, VRM: 800V, Io: 8A, IFSM: 200A, fetures, applications, GBU, GBU8AA THRU GBU8MA Features : - UL recognition, file #E230084 - Ideal for printed ...
Company: Dongguan Merry Electronic Co., Ltd.
Bridge Rectifiers, VRM: 800V, Io: 1.5A, IFSM: 60A, fetures, applications, DBL, DBL151 THRU DBL157
[Jul 04, 2025]
Bridge Rectifiers, VRM: 800V, Io: 1.5A, IFSM: 60A, fetures, applications, DBL, DBL151 THRU DBL157 Features : - UL recognition, file #E313149 - Glass passivated chip junction - ...
Company: Dongguan Merry Electronic Co., Ltd.
Super Fast Recovery Bridge Rectifiers, VRM: 600V, Io: 10A, IFSM: 175A, fetures, applications, GBU, ...
[Jul 04, 2025]
Super Fast Recovery Bridge Rectifiers, VRM: 600V, Io: 10A, IFSM: 175A, fetures, applications, GBU, EGBU1006 Features : - UL recognition, file #E230084 - Glass passivated chip ...
Company: Dongguan Merry Electronic Co., Ltd.
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 30V, ID: 1.4A, PD: 0.8W, fetures, ...
[Jul 04, 2025]
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 30V, ID: 1.4A, PD: 0.8W, fetures, applications, DFN1006-3L, YJA01N03KA Features : - VDS : 30V - ID : 1.4A - RDS(ON)( at ...
Company: Dongguan Merry Electronic Co., Ltd.
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 120A, PD: 108W, fetures, ...
[Jul 04, 2025]
N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 120A, PD: 108W, fetures, applications, PDFN5060-8L, YJG120G10AR Features : - VDS : 100V - ID : 120A - RDS(ON)( ...
Company: Dongguan Merry Electronic Co., Ltd.
N-Channel and P-Channel Complementary MOSFET, VDSS: 30/-30V, ID: 6/-4A, PD: 1.25W, fetures, ...
[Jul 04, 2025]
N-Channel and P-Channel Complementary MOSFET, VDSS: 30/-30V, ID: 6/-4A, PD: 1.25W, fetures, applications, PDFN3030-8L, YJU4606A Features : NMOS : - VDS : 30V - ID : 6A - ...
Company: Dongguan Merry Electronic Co., Ltd.
Super Fast Recovery Bridge Rectifiers, VRM: 600V, Io: 20A, IFSM: 180A, fetures, applications, 6KBJ, ...
[Jul 04, 2025]
Super Fast Recovery Bridge Rectifiers, VRM: 600V, Io: 20A, IFSM: 180A, fetures, applications, 6KBJ, EGBJ2006 Features : - UL recognition, file #E230084 - Glass passivated chip ...
Company: Dongguan Merry Electronic Co., Ltd.
